Non-volatile memory devices including blocking insulation patterns with sub-layers having different energy band gaps

ABSTRACT

A non-volatile memory device may include a semiconductor substrate and an isolation layer on the semiconductor substrate wherein the isolation layer defines an active region of the semiconductor substrate. A tunnel insulation layer may be provided on the active region of the semiconductor substrate, and a charge storage pattern may be provided on the tunnel insulation layer. An interface layer pattern may be provided on the charge storage pattern, and a blocking insulation pattern may be provided on the interface layer pattern. Moreover, the block insulation pattern may include a high-k dielectric material, and the interface layer pattern and the blocking insulation pattern may include different materials. A control gate electrode may be provided on the blocking insulating layer so that the blocking insulation pattern is between the interface layer pattern and the control gate electrode. Related methods are also discussed.

RELATED APPLICATIONS

This U.S. non-provisional patent application claims the benefit ofpriority as a continuation of U.S. application Ser. No. 13/305,930 filedNov. 29, 2011, which claims the benefit of priority as a divisional ofU.S. application Ser. No. 12/266,032 filed Nov. 6, 2008, which claimsthe benefit of priority under 35 U.S.C. §119 of Korean PatentApplication No. 10-2007-0113796, filed on Nov. 8, 2007, and KoreanPatent Application No. 10-2008-0023972, filed on Mar. 14, 2008. Thedisclosures of all of the above referenced U.S. and Korean applicationsare hereby incorporated herein by reference in their entities.

BACKGROUND

The present invention disclosed herein relates to memory devices, andmore particularly, to non-volatile memory devices.

A non-volatile memory device retains its stored information even whenthere is no power supply. A flash memory device as a representativenon-volatile memory device stores information based on whether electriccharges are stored or not in a floating gate interposed between acontrol gate and a substrate.

FIG. 1 is a cross sectional view of a conventional non-volatile memorydevice.

Referring to FIG. 1, a device isolation layer 12 is formed in asemiconductor substrate 10 to define an active region and a tunnelinsulation layer 14 is formed on the active region in a non-volatilememory device such as a flash memory device. A floating gate 16 isformed on the tunnel insulation layer 14, and a blocking insulationpattern 18 is formed on the floating gate 16 and the device isolationlayer 12. A control gate electrode 20 is formed on the blockinginsulation pattern 18. In a typical non-volatile memory device, thefloating gate 16 is formed protruding higher than the device isolationlayer 12 in order to augment a coupling ratio by increasing a surfacearea of the floating gate 16 that contacts the blocking insulationpattern 18. A typical structure of this non-volatile memory device mayhave various limitations if an interval between the floating gates 16 isdecreased due to the high degree of integration. If the height of thefloating gate 16 is increased and the interval between the floatinggates 16 is decreased, a conductive layer for forming the control gateelectrode 20 may not be completely filled between the floating gates 16.Additionally, as illustrated in FIG. 1, a parasitic capacitance C1 maybe formed between the floating gates 16, and as the interval between thefloating gates 16 is reduced, the parasitic capacitance may increase.Therefore, an interference phenomenon between adjacent memory cells maybe significant. Additionally, if a high-k dielectric layer is used asthe blocking insulation pattern 18 between the charge storage pattern 16and the control gate electrode 20 to increase the coupling ratio, aleakage current I_(leakage) may increase between the charge storagepattern 16 and the control gate electrode 20.

In a case of an erase operation of a non-volatile flash memory includinga doped silicon/oxide/nitride/oxide/silicon (SONOS) structure and afloating gate, because a back tunneling current flows, a speed of theerase operation may deteriorate.

SUMMARY

According to some embodiments of the present invention, a non-volatilememory device may include a semiconductor substrate and an isolationlayer on the semiconductor substrate, and the isolation layer may definean active region of the semiconductor substrate. A tunnel insulationlayer may be on the active region of the semiconductor substrate, and acharge storage pattern may be on the tunnel insulation layer so that thetunnel insulation layer is between the charge storage pattern and theactive region of the semiconductor substrate. An interface layer patternmay be on the charge storage pattern so that the charge storage patternis between the tunnel insulation layer and the interface layer pattern.A blocking insulation pattern may be on the interface layer pattern sothat the interface layer pattern is between the charge storage patternand the blocking insulation pattern. Moreover, the block insulationpattern may include a high-k dielectric material, and the interfacelayer pattern and the blocking insulation pattern comprise differentmaterials. A control gate electrode may be on the blocking insulatinglayer so that the blocking insulation pattern is between the interfacelayer pattern and the control gate electrode.

According to some other embodiments of the present invention, anon-volatile memory device may include a semiconductor substrate and atunnel insulation layer on the semiconductor substrate. A charge storagepattern may be on the tunnel insulation layer so that the tunnelinsulation layer is between the charge storage pattern and thesemiconductor substrate. A blocking insulation pattern may be on thecharge storage pattern so that the charge storage pattern is between thetunnel insulation layer and the blocking insulation pattern. Moreover,the blocking insulation pattern may include a first blocking insulationsub-layer, a second blocking insulation sub-layer, and a third blockinginsulation sub-layer. The second blocking insulation sub-layer may bebetween the first and third blocking insulation sub-layers, and anenergy band gap of the second blocking insulation may be greater thanenergy band gaps of the first and third blocking insulation sub-layers.

Embodiments of the present invention may provide a non-volatile memorydevice of a structure with a reduced leakage current between a chargestorage pattern and a gate electrode.

Embodiments of the present invention may also provide methods offabricating non-volatile memory devices having structures with reducedleakage current between charge storage patterns and control gateelectrodes.

Embodiments of the present invention may also provide a non-volatilememory with a reduced back tunneling current.

Embodiments of the present invention may also provide a non-volatilememory device with an increased retention time.

Embodiments of the present invention may provide non-volatile memorydevices including a device isolation layer, a charge storage pattern, aninterface layer pattern, a blocking insulation pattern, and a controlgate electrode. The device isolation layer may define a plurality ofactive regions in a semiconductor substrate. The charge storage patternmay be formed by interposing a tunnel insulation layer on the activeregions. The interface layer pattern may be formed on the charge storagepattern. The blocking insulation pattern may include a high-k dielectricon the interface layer pattern. The control gate electrode may be formedon the blocking insulation pattern, and the interface layer pattern mayinclude a material different from that of the blocking insulationpattern.

In some embodiments, the interface layer pattern may reduce a leakagecurrent between the charge storage pattern and the control gateelectrode.

In other embodiments, the interface layer pattern may be conductor or asemiconductor, and the interface layer patterns on the active regionsmay be separated from each other.

In still other embodiments, the interface layer pattern may include atleast one of metal, a metal compound, metal silicide, silicon, and ametal nitride layer.

In even other embodiments, the interface layer pattern may be adielectric and may extend on the device isolation layer.

In yet other embodiments, the interface layer pattern may include atleast of one of a silicon oxide layer, a silicon nitride layer, and asilicon oxide nitride layer.

In further embodiments, a top of the device isolation layer may behigher than that of the active region. The tunnel insulation layer andthe charge storage pattern may be sequentially-stacked on the activeregion. The tunnel insulation layer and bottom sides of the chargestorage pattern may be aligned to each other. A top of the chargestorage pattern may be higher than that of the device isolation layer,the charge storage patterns may be separated from each other, and theinterface layer pattern may be disposed on a top and a top side of thecharge storage pattern.

In still further embodiments, a top of the device isolation layer may behigher than that of the active region. The tunnel insulation layer andthe charge storage pattern may be sequentially-stacked on the activeregion. The interface layer pattern may be disposed on the chargestorage pattern. Sides of the tunnel insulation layer, the chargestorage pattern, and interface layer pattern may be aligned to eachother, and a height of a top of the interface layer pattern may be thesame as that of the device isolation layer.

In even further embodiments, a top of the device isolation layer may behigher than that of the active region. The tunnel insulation layer andthe charge storage pattern may be sequentially-stacked on the activeregion. The interface layer pattern may be disposed on the chargestorage pattern. Sides of the tunnel insulation layer and the chargestorage pattern may be aligned to each other. The interface layerpattern may extend on the device isolation layer, and a height of a topof the charge storage pattern may be the same as that of the deviceisolation layer.

In yet further embodiments, a top of the device isolation layer may behigher than that of the active region. The tunnel insulation layer andthe charge storage pattern may be sequentially-stacked on the activeregion. The tunnel insulation layer and bottom sides of the chargestorage pattern may be aligned to each other. A top of the chargestorage pattern may be higher than that of the device isolation layer,and the interface layer pattern may be disposed on a top and a top sideof the charge storage pattern.

In yet further embodiments, a top of the device isolation layer may behigher than that of the active region. The tunnel insulation layer andthe charge storage pattern may be sequentially-stacked on the activeregion. The tunnel insulation layer and bottom sides of the chargestorage pattern may be aligned to each other. A top of the chargestorage pattern may be higher than that of the device isolation layer,and the interface layer pattern may be disposed on a top and a top sideof the charge storage pattern and on the device isolation layer.

In yet further embodiments, a top of the device isolation layer may behigher than that of the active region. The tunnel insulation layer andthe charge storage pattern may be sequentially-stacked on the activeregion. The tunnel insulation layer and bottom sides of the chargestorage pattern may be aligned to each other. A top of the chargestorage pattern may be higher than that of the device isolation layer.The interface layer pattern may be disposed on a top of the chargestorage pattern, and top sides of the interface layer pattern and thecharge storage pattern may be aligned to each other.

In yet further embodiments, the blocking insulation pattern may includea sequentially-stacked first blocking insulation pattern, a secondblocking insulation pattern, and a third blocking insulation pattern. Apermittivity of the second blocking insulation pattern may be less thanpermittivities of the first blocking insulation pattern and the thirdblocking insulation pattern.

In yet further embodiments, the charge storage pattern may include atleast one of doped silicon, metal, and a metal compound.

In yet further embodiments, the control gate electrode may include atleast one of sequentially-stacked barrier metal/high work functionmetal, sequentially-stacked metal/barrier metal/metal,sequentially-stacked doped polysilicon/barrier metal/high work functionmetal, metal, and doped polysilicon.

In yet further embodiments, the barrier metal may include a metalnitride layer.

In other embodiments of the present invention, non-volatile memorydevice may include a tunnel insulation pattern, a charge storagepattern, a blocking insulation pattern, and a control gate electrode.The tunnel insulation pattern may be formed on a semiconductorsubstrate. The charge storage pattern may be formed on the tunnelinsulation pattern. The blocking insulation pattern may be formed on thecharge storage pattern. The control gate electrode may be formed on theblocking insulation pattern. The blocking insulation pattern may includea sequentially-stacked first blocking insulation pattern, secondblocking insulation pattern, and third blocking insulation pattern. Anenergy band gap of the second blocking insulation pattern may be greaterthan those of the first blocking insulation pattern and the thirdblocking insulation pattern.

In some embodiments, the charge storage pattern may be an insulatingmaterial with a charge trap site or a conductive floating gate.

In other embodiments, a permittivity of the second blocking insulationpattern may be less than permittivities of the first blocking insulationpattern and the third blocking insulation pattern.

In still other embodiments, a trap density of the second blockinginsulation pattern may be less than trap densities of the first blockinginsulation pattern and the third blocking insulation pattern.

In even other embodiments, the blocking insulation pattern may furtherinclude a fourth blocking insulation pattern on the third blockinginsulation pattern to alternate a material of a different energy bandgap.

In yet other embodiments, the first blocking insulation pattern and thethird blocking insulation pattern may include at least one of a metaloxide layer, a metal nitride layer, and a metal oxide nitride layer.

In further embodiments, the second blocking insulation pattern mayinclude at least one of a silicon oxide layer, a metal oxide layer, ametal nitride layer, and a metal oxide nitride layer.

In still further embodiments, the charge storage pattern may include atleast one of a silicon nitride layer, a metal quantum dot, a siliconquantum dot, metal, doped silicon, and doped germanium.

In even further embodiments, the floating gate may include at least oneof n-type conductive polysilicon, p-type conductive polysilicon, metal,and doped germanium.

In yet further embodiments, the metal may include at least one of a puremetal and a metal compound.

In yet further embodiments, the control gate electrode may have astructure of a sequentially-stacked barrier metal and high work functionmetal.

In yet further embodiments, the high work function metal may have a workfunction of more than 4.5 eV.

In yet further embodiments, the barrier metal may include at least oneof a metal nitride layer, a silicon nitride layer, and a combinationthereof, each of which may reduce reaction between the high workfunction metal and the blocking insulation layer.

In yet further embodiments, the control gate electrode may include atleast one of a high work function metal and doped polysilicon, each ofwhich is interposed between the barrier metal and the blockinginsulation layer.

In yet further embodiments, the control gate electrode may include asequentially-stacked doped silicon and metal, a pure metal, and a metalcontaining material.

In yet further embodiments, the first blocking insulation pattern mayinclude the same material as the third blocking insulation pattern andthe first blocking insulation pattern may have the same energy band gapas the third blocking insulation pattern.

BRIEF DESCRIPTION OF THE FIGURES

The accompanying figures are included to provide a further understandingof the present invention, and are incorporated in and constitute a partof this specification. The drawings illustrate examples of embodimentsof the present invention and, together with the description, serve toexplain principles of the present invention. In the figures:

FIG. 1 is a cross sectional view of a conventional non-volatile memorydevice;

FIG. 2 is a block diagram illustrating a non-volatile memory deviceincluding a memory cell array according to embodiments of the presentinvention;

FIGS. 3A through 3C are respective plan and cross sectional viewsillustrating a NAND non-volatile memory device according to embodimentsof the present invention;

FIGS. 4 through 8 are perspective views illustrating a non-volatilememory device according to some embodiments of the present invention;

FIGS. 9 through 13 are cross-sectional views illustrating a non-volatilememory device according to embodiments of the present invention;

FIGS. 14A through 14D are cross-sectional views illustrating operationsof fabricating a non-volatile memory device according to someembodiments of the present invention;

FIGS. 15A and 15B are respective plan and cross sectional viewsillustrating a NOR non-volatile memory device according to embodimentsof the present invention;

FIG. 16 is a block diagram illustrating an electronic system with anon-volatile memory device according to embodiments of the presentinvention;

FIG. 17 is a block diagram illustrating a memory card with anon-volatile memory device according to embodiments of the presentinvention;

FIGS. 18A and 18B are respective plan and cross sectional viewsillustrating a NAND non-volatile memory device according to embodimentsof the present invention;

FIGS. 19A and 19B are respective plan and cross sectional viewsillustrating a NOR non-volatile memory device according to embodimentsof the present invention;

FIG. 20 is a cross-sectional view taken along a line V-V′ of FIG. 18Aillustrating a charge trap non-volatile memory device according to someembodiments of the present invention;

FIGS. 21A through 21D illustrate flat band energy band diagrams of anon-volatile memory device according to some embodiments of the presentinvention;

FIG. 22 illustrates an energy band diagram when a negative erase voltageV₀ is applied to a non-volatile memory device according to embodimentsof the present invention;

FIG. 23 is a cross-sectional view taken along a line V-V′ of FIG. 18Aillustrating a floating gate non-volatile memory device according toother embodiments of the present invention; and

FIGS. 24A through 24C illustrate flat band energy band diagrams of anon-volatile memory device according to other embodiments of the presentinvention.

DETAILED DESCRIPTION

The present invention is described more fully hereinafter with referenceto the accompanying drawings, in which embodiments of the presentinvention are shown. This invention may, however, be embodied in manydifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the present invention to those skilled in the art.In the drawings, the sizes and relative sizes of layers and regions maybe exaggerated for clarity. Like numbers refer to like elementsthroughout.

It will be understood that when an element or layer is referred to asbeing “on”, “connected to” or “coupled to” another element or layer, itcan be directly on, connected or coupled to the other element, or layeror intervening elements or layers may be present. In contrast, when anelement is referred to as being “directly on,” “directly connected to”or “directly coupled to” another element or layer, there are nointervening elements or layers present. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the present invention.

Spatially relative terms, such as “beneath”, “below”, “lower”, “above”,“upper”, “top”, “higher”, and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. It will beunderstood that the spatially relative terms are intended to encompassdifferent orientations of the device in use or operation in addition tothe orientation depicted in the figures. For example, if the device inthe figures is turned over, elements described as “below” or “beneath”other elements or features would then be oriented “above” the otherelements or features. Thus, the exemplary term “below” can encompassboth an orientation of above and below. The device may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein interpreted accordingly. Also, as usedherein, “lateral” refers to a direction that is substantially orthogonalto a vertical direction.

The terminology used herein is for the purpose of describing particularembodiments only, and is not intended to be limiting of the presentinvention. As used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof.

Example embodiments of the present invention are described herein withreference to cross-section illustrations that are schematicillustrations of idealized embodiments (and intermediate structures) ofthe invention. As such, variations from the shapes of the illustrationsas a result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, embodiments of the present invention shouldnot be construed as limited to the particular shapes of regionsillustrated herein but are to include deviations in shapes that result,for example, from manufacturing. For example, an implanted regionillustrated as a rectangle will, typically, have rounded or curvedfeatures and/or a gradient of implant concentration at its edges ratherthan a binary change from implanted to non-implanted region. Likewise, aburied region formed by implantation may result in some implantation inthe region between the buried region and the surface through which theimplantation takes place. Thus, the regions illustrated in the figuresare schematic in nature and their shapes are not intended to illustratethe actual shape of a region of a device and are not intended to limitthe scope of the present invention.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs.Accordingly, these terms can include equivalent terms that are createdafter such time. It will be further understood that terms, such as thosedefined in commonly used dictionaries, should be interpreted as having ameaning that is consistent with their meaning in the presentspecification and in the context of the relevant art, and will not beinterpreted in an idealized or overly formal sense unless expressly sodefined herein. All publications, patent applications, patents, andother references mentioned herein are incorporated by reference in theirentirety.

FIG. 2 is a block diagram illustrating a non-volatile memory deviceincluding a memory cell array according to some embodiments of thepresent invention. The memory cell array 1 includes a plurality of celltransistors M1. Each cell transistor M1 is provided on a conductivesemiconductor substrate and includes conductive source and drain regionsspaced a predetermined distance apart from each other, a charge storagepattern (not shown) storing charges and disposed on a channel regionbetween the source and drain regions, an interface layer (not shown)disposed on the charge storage pattern, a blocking insulation pattern(not shown) formed on the interface layer pattern, and a control gateelectrode (not shown) disposed on the blocking insulation pattern.

Referring to FIG. 2, the memory cell array 1 includes a plurality ofcell strings 2 corresponding to respective bit lines BL. Each cellstring 2 includes a string selection transistor SST as a first selectiontransistor, a ground selection transistor GST as a second selectiontransistor, and a plurality of memory cells M1 connected in seriesbetween the string and ground selection transistors SST and GST. Thestring selection transistor SST includes a drain connected to thecorresponding bit line BL and a gate connected to a string selectionline SSL. The ground selection transistor GST includes a sourceconnected to a common source line CSL and a gate connected to a groundselection line GSL. The memory cells M1 are connected in series betweenthe source of the string selection transistor SST and the drain of theground selection transistor GST. The memory cells M1 are connected tothe corresponding word lines WL, respectively. The word lines WL, thestring selection line SSL, and the ground selection line GSL areconnected to an X-decoder.

FIGS. 3A through 3C are views illustrating a NAND non-volatile memorydevice according to embodiments of the present invention. FIG. 3B is across-sectional view taken along line I-I′. FIG. 3C is a cross-sectionalview taken along line II-II′ of FIG. 3A.

Referring to FIGS. 3A and 3B, the NAND non-volatile memory deviceincludes a semiconductor substrate 100 having a cell region. A deviceisolation layer 102 is disposed in the semiconductor substrate 100. Thedevice isolation layer 102 defines active regions 104. The activeregions 104 extend in one direction. A string selection line SSL and aground selection line GSL laterally cross over the active regions 104and a plurality of word lines WL laterally cross over the active regions104 between the string selection line SSL and the ground selection lineGSL. The string selection line SSL, the ground selection line GSL, andthe word lines WL extend in another direction crossing over the onedirection. The string selection line SSL, the word lines WL, and theground selection lines GSL may be included in a cell string group. Thecell string group may be repeatedly disposed along the one direction inmirror symmetry.

Impurity regions 107 corresponding to a source and a drain may bedisposed in the active regions 104 on the both sides of each of thestring selection line SSL, the word lines WL, and the ground selectionline GSL. The word line WL and the impurity regions 107 c on the bothsides of the word line WL provide a cell transistor. The groundselection line GSL and impurity regions 107 a and 107 b on both sides ofthe ground selection line GSL provide a ground selection transistor GST.The string selection line SSL and impurity regions 107 d and 107 e onboth sides of the string selection line SSL provide a string selectiontransistor SST.

The word line WL may include a tunnel insulation layer 110, a chargestorage pattern 120, an interface layer pattern 130, a blockinginsulation pattern 140, and a control gate electrode 150. The tunnelinsulation layer 110 may include at least one of a silicon oxide layerand a high-k dielectric layer (i.e., a layer of a dielectric materialhaving a relatively high dielectric constant). A high-k dielectriclayer, for example, may be a layer of a dielectric material having adielectric constant greater than that of silicon oxide. The chargestorage pattern 120 may be a conductor or a dielectric based on afloating gate non-volatile memory or a charge trap non-volatile memory.The charge storage pattern 120 may include doped polysilicon for afloating gate non-volatile memory. The charge storage pattern 120 mayinclude a silicon nitride layer for charge trap non-volatile memory.

A hard mask pattern (not shown) may be disposed on the control gateelectrode 150. The ground selection line GSL and the string selectionling SSL may have the same structure as a word line WL, or widths of thestring selection ling SSL and the ground selection line GSL may bedifferent from that of a word line WL. More particularly, a portion orthe entirety of the interface layer pattern 130 and the blockinginsulation pattern 140 may be removed from the string selection line SSLand the ground selection line GSL such that a butting contact is formedto electrically connect the charge storage pattern 120 with the controlgate electrode 150.

According to a modified embodiment of the present invention, layers ofthe ground and string selection lines GSL and SSL corresponding to thetunnel insulation layer 110, the charge storage pattern 120, theinterface layer pattern 130, and the blocking insulation pattern 140 maybe used as a gate dielectric and insulation layers of the ground andstring selection transistors.

The common source line CSL is disposed on the sources 107 a of theground selection transistors GST, and the common source line CSL mayextend a direction perpendicular with respect to the bit lines. Arespective bit line contact BC is disposed on the drain 107 e of eachstring selection transistor SST. The bit line contact BC is connected tothe bit line BL that extends in a direction perpendicular with respectto the word lines.

FIG. 4 is a perspective view illustrating a non-volatile memory deviceaccording to some embodiments of the present invention.

Referring to FIG. 4, a device isolation layer 102 is formed in asemiconductor substrate 100 to define an active region 104. The deviceisolation layer 102 may be formed by applying a shallow trench isolation(STI) technique. The top of the device isolation layer 102 may be higherthan that of the active region 104. A tunnel insulation layer 110 may beformed on the active region 104. The tunnel insulation layer 110 may beformed using a thermal oxide process. Charge storage patterns 120 may beformed on the tunnel insulation layer 110 and the device isolation layer102. Each charge storage pattern 120 may be separated from adjacentcharge storage patterns 120 so that the charge storage patterns 120formed on the active regions 104 may be separated from each other. Thecharge storage pattern 120 may cover a portion of the device isolationlayer 102. Accordingly, the top of the charge storage pattern 120 may behigher than that of the device isolation layer 102. The charge storagepattern 120 may be formed by forming and patterning a charge storagelayer (not shown) on the tunnel insulation layer 110. Accordingly,charge storage patterns 120 on an adjacent active region 104 may beseparated from each other. An interface layer pattern 130, a blockinginsulation pattern 140, and a control gate electrode 150 may besequentially disposed on the charge storage pattern 120 and the deviceisolation layer 102. The interface layer pattern 130 may be conformallyformed on the charge storage pattern 120 and the device isolation layer102. The top of the interface layer pattern 130 may have a curved shape.The interface layer pattern 130 may extend toward the charge storagepattern 120 on other adjacent active regions 104. The sides of thecharge storage pattern 120, the interface layer pattern 130, theblocking insulation pattern 140, and the control gate electrode 150 maybe aligned. The interface layer pattern 130 may reduce transfer ofcharges stored in charge storage patterns 120. When the blockinginsulation pattern 140 includes a high-k dielectric layer, the interfacelayer pattern 130 may reduce a leakage current between the control gateelectrode 150 and the charge storage pattern 120. The interface layerpattern 130 may be formed of a material that improves an interfacejunction characteristic between the blocking insulation pattern 140 andthe charge storage pattern 120. A first interlayer insulation layer 160and a second interlayer insulation layer 170 may be formed on thecontrol gate electrode 150. Bit lines BL may be formed on the secondinterlayer insulation layer 170.

The device isolation layer 102 may be formed using an STI technique. Thedevice isolation layer may be a silicon oxide layer.

The tunnel insulation layer 110 may include a thermal oxide layer havingthe thickness in the range of about 20 Å (Angstroms) to 100 Å(Angstroms) and may be formed using in-situ steam generation (ISSG).That is, an oxide layer may be formed by injecting hydrogen and oxygenin a chamber at 850° C. (degrees C.) to 900° C. (degrees C.) at apressure in the rage of about 5 Torr to 100 Torr. The tunnel insulationlayer 110 is not limited to the silicon oxide layer and may include atleast one of a silicon oxide nitride layer and/or a metal oxide layer.

The charge storage pattern 120 may be formed of polysilicon. Thepolysilicon may be polysilicon that is in-situ doped during a depositionprocess. The charge storage pattern 120 is not limited to polysiliconand may include at least one of doped silicon, a metal, and/or a metalcompound.

The charge storage pattern 120 may be a charge trap layer. The chargetrap layer may include a silicon nitride layer. The charge storagepattern 120 is not limited to a single layer structure and may have amultilayered structure. The charge storage pattern 120 may include atleast one of a silicon quantum dot, a metal quantum dot, highconcentration silicon, and high concentration germanium, each of whichis included in an insulation layer.

The interface layer pattern 130 may include at least one of adielectric, a conductor, and/or a semiconductor. If the interface layerpattern 130 is a dielectric, it may include at least one of a siliconoxide layer, a silicon nitride layer, and/or a silicon oxide nitridelayer. If the charge storage pattern 120 is formed of polysilicon, andif the blocking insulation pattern 140 includes an aluminum oxide layer,the interface layer pattern 130 may be formed of a silicon oxide layer.If the interface layer pattern 130 is a dielectric, the interfacepatterns 130 disposed on adjacent active regions 104 may be connected toeach other.

According to other embodiments of the present invention, if theinterface layer pattern 130 is a conductor or a semiconductor, theinterface layer patterns 130 disposed on adjacent active regions 104 maybe separated from each other. If the interface layer pattern 130 is aconductor or a semiconductor, the interface layer pattern 130 mayinclude at least one of a metal, a metal compound, metal silicide,silicon, and a metal nitride layer. For example, if the charge storagepattern 120 is a conductor or a semiconductor and the blockinginsulation pattern 140 is an aluminum oxide layer, the interface layerpattern 130 may include a metal nitride layer.

The blocking insulation pattern 140 may include a high-k dielectriclayer. The high-k dielectric layer may have a higher permittivity than asilicon oxide layer. The high-k dielectric layer can increase theabove-mentioned coupling ratio. The blocking insulation pattern 140 mayinclude a first blocking insulation pattern, a second blockinginsulation pattern, and a third blocking insulation pattern, which aresequentially-stacked. A permittivity of the second blocking insulationpattern may be less than those of the first blocking insulation patternand the third blocking insulation pattern. More particularly, analuminum oxide layer may be used as the first and third blockinginsulation patterns, and a silicon oxide layer may be used as the secondblocking insulation pattern. The blocking insulation pattern may furtherinclude a fourth blocking insulation pattern on the third blockinginsulation pattern. The fourth blocking insulation pattern may have thesame material as the second blocking insulation pattern. The firstblocking insulation pattern may include at least one of a metal oxidelayer, a metal nitride layer, and/or a metal oxide nitride layer, eachof which has a higher permittivity than a silicon oxide layer. The metaloxide layer may include at least one of an aluminum oxide layer, ahafnium oxide layer, a zirconium oxide layer, and/or a hafnium aluminumoxide layer. The second blocking insulation pattern may include at leastone of a silicon oxide layer, a silicon oxide nitride layer, a siliconnitride layer, a metal oxide layer, a metal nitride layer, and/or ametal oxide nitride layer.

The control gate electrode 150 may include at least one ofsequentially-stacked barrier metal/high work function metal,sequentially-stacked high work function metal/barrier metal/metal,sequentially-stacked doped polysilicon/barrier metal/metal,sequentially-stacked metal/doped polysilicon, metal, and/or dopedpolysilicon. The barrier metal may include at least one of a metalnitride layer and/or a metal oxide nitride layer.

FIG. 5 is a perspective view illustrating a non-volatile memory deviceaccording to other embodiments of the present invention.

Referring to FIG. 5, a device isolation layer 102 is formed in asemiconductor substrate 100 to define an active region 104. The deviceisolation layer 102 may be formed using an a STI technique. The top ofthe device isolation layer 102 may be higher than that of the activeregions 104. The tunnel insulation layer 110 may be formed on the activeregions 104. The tunnel insulation layer 110 may be formed using athermal oxide process. The charge storage pattern 120 may be formed onthe tunnel insulation layer 110 and the device isolation layer 102. Eachcharge storage pattern 120 may be separated from adjacent charge storagepatterns 120. That is, the charge storage patterns 120 formed on theactive regions 104 may be separated from each other. Each charge storagepattern 120 may cover a portion of the device isolation layer 102.Accordingly, the top of a charge storage pattern 120 may be higher thanthat of the device isolation layer 102. Sidewalls of a charge storagepattern 120 and an interface layer pattern 130 thereon aligned with eachother. An interface layer pattern 130 of a charge storage pattern 120may be separated from another interface layer pattern 130 on an adjacentcharge storage pattern 120. A blocking insulation pattern 140 isconformally formed on the charge storage pattern 120 and the deviceisolation layer 102. The blocking insulation pattern 140 may fill spacebetween adjacent charge storage patterns 120. The top of the blockinginsulation pattern 140 may be uneven.

A control gate electrode 150 is disposed on the blocking insulationpattern 140. The interface layer pattern 130 may reduce transfer ofcharges stored in the charge storage pattern 120. When the blockinginsulation pattern 140 includes a high-k dielectric layer, the interfacelayer pattern 130 may reduce a leakage current between the control gateelectrode 150 and the charge storage pattern 120. The interface layerpattern 130 may be formed of a material that improves an interfacejunction characteristic between the blocking insulation pattern 140 andthe charge storage pattern 120. A first interlayer insulation layer

Referring to FIG. 7, a device isolation layer 102 is formed on asemiconductor substrate 100 to define active regions 104. The deviceisolation layer 102 may be formed using an STI technique. The top of thedevice isolation layer 102 may be higher than that of the active regions104. A tunnel insulation layer 110 may be formed on the active regions104. The tunnel insulation layer 110 may be formed using a thermal oxideprocess. A charge storage pattern 120 may be formed on the tunnelinsulation layer 110 and the device isolation layer 102. Each chargestorage pattern 120 may be separated from adjacent charge storagepatterns 120. The charge storage patterns 120 formed on the activeregions 104 may be separated from each other. The charge storagepatterns 120 may be disposed between adjacent device isolation layers102. Accordingly, the top of each charge storage pattern 120 may belower than that of the device isolation layer 102. Accordingly, aparasitic capacitance can be reduced between adjacent charge storagepatterns 120. An interface layer pattern 130 may be disposed on eachcharge storage pattern 120. The top of each interface layer pattern 130may be substantially even with that of the device isolation layer 130.Additionally, each interface layer pattern 130 may be separated fromother interface patterns 130 disposed on adjacent active regions 104.The interface layer pattern 130 may be formed of a conductor, adielectric, and/or a semiconductor. The interface layer pattern 130 mayinclude a metal silicide and/or a thermal oxide layer.

A blocking insulation pattern 140 and a control gate electrode 150 aresequentially disposed on the interface layer pattern 130 and the deviceisolation layer 102. The interface layer pattern 130 may reduce transferof charges stored in the charge storage pattern 120. When the blockinginsulation pattern 140 includes a high-k dielectric layer, the interfacelayer pattern 130 may reduce a leakage current between the control gateelectrode 150 and the charge storage pattern 120. The interface layerpattern 130 may be formed of a material that improves an interfacejunction characteristic between the blocking insulation pattern 140 andthe charge storage pattern 120. A first interlayer insulation layer 160and a second interlayer insulation layer 170 may be formed on thecontrol gate electrode(s) 150. A bit line(s) BL may be formed on thesecond interlayer insulation layer 170.

FIG. 8 is a perspective view illustrating a non-volatile memory deviceaccording to further other embodiments of the present invention.

Referring to FIG. 8, a memory cell array may be multilayered. A deviceisolation layer 102 a is formed on a semiconductor substrate 100 todefine first active regions 104 a. The device isolation layer 102 a maybe formed by using an STI technique. The top of the device isolationlayer 102 a may be higher than that of the first active regions 104 a. A160 and a second interlayer insulation layer 170 may be formed on thecontrol gate electrode(s) 150. A bit line(s) BL may be formed on thesecond interlayer insulation layer 170. Further description of elementspreviously discussed with respect to FIG. 4 will be omitted forconciseness.

FIG. 6 is a perspective view illustrating a non-volatile memory deviceaccording to further embodiments of the present invention.

Referring to FIG. 6, a device isolation layer 102 is formed on asemiconductor substrate 100 to define active regions 104. The deviceisolation layer 102 may be formed using an STI technique. The top of thedevice isolation layer 102 may be higher than that of the active region104. The tunnel insulation layer 110 may be formed on the active region104. The tunnel insulation layer 110 may be formed using a thermal oxideprocess. A charge storage pattern 120 may be formed on the tunnelinsulation layer 110 and the device isolation layer 102. Each chargestorage pattern 120 may be separated from adjacent charge storagepatterns 120. That is, the charge storage patterns 120 formed on theactive regions 104 may be separated from each other. The top of eachcharge storage pattern 120 may have the same height as that of thedevice isolation layer 102. An interface layer pattern 130, a blockinginsulation pattern 140, and a control gate electrode 150 may besequentially disposed on the charge storage pattern 120 and the deviceisolation layer 102. Sidewalls of the charge storage pattern 120, theinterface pattern 130, the blocking insulation pattern 140, and thecontrol gate electrode 150 may be aligned with each other. The interfacelayer pattern 130 may be formed of a dielectric and may extend in adirection of the word line WL.

The interface layer pattern 130 may reduce transfer of charges stored inthe charge storage pattern 120. When the blocking insulation pattern 140includes a high-k dielectric layer, the interface layer pattern 130 mayreduce a leakage current between the control gate electrode 150 and thecharge storage pattern 120. The interface layer pattern 130 may beformed of a material that improves an interface junction characteristicbetween the blocking insulation pattern 140 and the charge storagepattern 120. A first interlayer insulation layer 160 and a secondinterlayer insulation layer 170 may be formed on the control gateelectrode(s) 150. A bit line(s) BL may be formed on the secondinterlayer insulation layer 170. Further description of elementspreviously discussed with respect to FIG. 4 will be omitted forconciseness.

FIG. 7 is a perspective view illustrating a non-volatile memory deviceaccording to further embodiments of the present invention.

tunnel insulation layer 110 a may be formed on the first active region104 a. The tunnel insulation layer 110 a may be formed using a thermaloxide process. First charge storage patterns 120 a may be formed on thetunnel insulation layer 110 a. The first charge storage patterns 120 amay be separated from adjacent first charge storage patterns 120. Thatis, the first charge storage patterns 120 a formed on the first activeregions 104 a may be separated from each other. The charge storagepatterns 120 a may be disposed between adjacent first device isolationlayers 102 a. Accordingly, tops of the first charge storage patterns 120a may be lower than that of the device isolation layer 102 a. Firstinterface layer patterns 130 a may be disposed on the first chargestorage patterns 120 a. Top of the first interface layer patterns 130 amay be substantially even with tops of the first device isolation layer102 a. Additionally, first interface layer patterns 130 a are separatedfrom other first interface layer patterns 130 a disposed on an adjacentactive regions 104 a.

A first blocking insulation pattern 140 a and a first control gateelectrode 150 a are sequentially disposed on the first interface layerpatterns 130 a and the first device isolation layer 102 a. The firstinterface layer patterns 130 a may reduce transfer of charges stored inthe charge storage pattern 120 a. When the first blocking insulationpattern 140 a includes a high-k dielectric layer, the first interfacelayer pattern 130 a may reduce a leakage current between the firstcontrol gate electrode 150 a and the first charge storage pattern 120 a.The first interface layer pattern 130 a may be formed of a material thatimproves an interface junction characteristic between the first blockinginsulation pattern 140 a and the first charge storage patterns 120 a. Alower interlayer insulation layer 160 a may be formed on the firstcontrol gate electrode(s) 150 a.

A silicon single crystalline layer 180 may be formed on or bonded to asemiconductor substrate 100 having the lower interlayer insulation layer160 a. A second device isolation layer 102 b is formed in the siliconsingle crystalline layer 180 to define second active regions 104 b. Thesecond device isolation layer 102 b may be formed using an STItechnique. The top of the second device isolation layer 102 b is higherthan that of the second active regions 104 b. A second tunnel insulationlayer 110 b is formed on the second active regions 104 b. The secondtunnel insulation layer 110 b may be formed using a thermal oxideprocess. Second charge storage patterns 120 b are formed on the secondtunnel insulation layers 110 b. Each second charge storage pattern 120 bmay be separated from adjacent second charge storage patterns 120 b.That is, the second charge storage patterns 120 b formed on the secondactive regions 104 b are separated from each other. The second chargestorage pattern 120 b may be disposed between adjacent second deviceisolation layers 102 b. Accordingly, the top of the second chargestorage patterns 120 b may be lower than that of the second deviceisolation layer 102 b. Second interface layer patterns 130 b may bedisposed on the second charge storage patterns 120 b. The top of thesecond interface layer pattern 130 b may be substantially even with topsof the second device isolation layer 1021). Additionally, each secondinterface layer pattern 130 b may be separated from other secondinterface layer patterns 130 b disposed on an adjacent second activeregion 104 b.

A second blocking insulation pattern 140 b and a second control gateelectrode 150 b are sequentially disposed on the second interface layerpatterns 130 b and the second device isolation layer 102 b. The secondinterface layer patterns 130 b may reduce transfer of charges stored inthe second charge storage pattern 120 b. That is, when the secondblocking insulation pattern 140 b includes a high-k dielectric layer,the second interface layer patterns 130 b may reduce a leakage currentbetween the second control gate electrode 150 b and the second chargestorage pattern 1201). The second interface layer pattern 130 b may beformed of a material for that improves an interface junctioncharacteristic between the second blocking insulation pattern 140 b andthe second charge storage pattern 1201). An upper interlayer insulationlayer 190 may be formed on the second control gate electrode(s) 150 b. Abit line(s) BL may be formed on the upper interlayer insulation layer190.

FIGS. 9 through 13 are cross-sectional views illustrating a non-volatilememory devices according to embodiments of the present invention.

Referring to FIG. 9, a device isolation layer 202 may be formed on/in asemiconductor substrate 200 to define an active region 204. The deviceisolation layer 202 may be formed using a shallow trench isolation (STI)technique. The top of the device isolation layer 202 may be higher thanthat of the active region 204. A tunnel insulation layer 210 may beformed on the active region 204. The tunnel insulation layer 210 may beformed using a thermal oxide process. A charge storage pattern 220 isformed on the tunnel insulation layer 210. The charge storage pattern220 may be separated from adjacent charge storage patterns 220. Thecharge storage patterns 220 formed on the active regions 204 areseparated from each other. The top of the charge storage pattern 220 maybe higher than that of the device isolation layer 202. An interfacelayer pattern 230 is formed on the charge storage pattern 220. Sidewallsof the upper portion of the charge storage pattern 220 and sidewalls ofthe interface layer pattern 230 may be substantially aligned with eachother. The interface layer pattern 230 may be formed of a dielectric ora conductor. In greater detail, if the interface layer pattern 230 isformed of a dielectric, it may be formed by oxidizing a top portion ofthe charge storage pattern 220 before patterning the charge storagepattern 220. If the charge storage pattern 220 is formed of polysilicon,the interface layer pattern 230 may be formed of a metal silicide, or bydepositing a material providing an improved interface characteristic onthe charge storage pattern 220.

A blocking insulation pattern 240 and a control gate electrode 250 aresequentially disposed on the interface layer pattern 230 and on thedevice isolation layer 202. The interface layer pattern 230 reducestransfer of charges stored in the charge storage pattern 220. That is,when the blocking insulation pattern 240 includes a high-k dielectriclayer, the interface layer pattern 230 may reduce a leakage currentbetween the gate electrode 250 and the charge storage pattern 220. Theinterface layer pattern 230 may be formed of a material that improves aninterface junction characteristic between the blocking insulationpattern 240 and the charge storage pattern 220. The blocking insulationpattern 240 may include a first blocking insulation pattern 240 a, asecond blocking insulation pattern 240 b, and a third blockinginsulation pattern 240 c. The first and third blocking insulationpatterns 240 a and 240 c may be formed of a same material.Permittivities of the first and third blocking insulation patterns 240 aand 240 c may be greater than a permittivity of the second blockinginsulation pattern 240 b. For example, the second blocking insulationpattern 240 b is formed of a silicon oxide layer and each of the firstand third blocking insulation patterns 240 a and 240 c may be formed ofa high-k dielectric layers such as an aluminum oxide layer.

Referring to FIG. 10, a device isolation layer 302 is formed on/in asemiconductor substrate 300 to define an active region 304. The deviceisolation layer 302 may be formed using an STI technique. The top of thedevice isolation layer 302 may be higher than that of the active region304. A tunnel insulation layer 310 may be formed on the active region304. The tunnel insulation layer 310 may be formed using a thermal oxideprocess. A charge storage pattern 320 may be formed on the tunnelinsulation layer 310. The charge storage pattern 320 may be separatedfrom a adjacent charge storage patterns 320. That is, charge storagepatterns 320 formed on the active regions 304 may be separated from eachother. A top of the charge storage pattern 320 may be lower than that ofthe device isolation layer 302. The top of an interface layer pattern330 may be substantially even with a top of the device isolation layer302. A blocking insulation pattern 340 and a control gate electrode 350may be sequentially disposed on the interface layer pattern 330 and thedevice isolation layer 302. The interface layer pattern 330 may reducetransfer of charges stored in the charge storage pattern 320. Theinterface layer pattern 330 may be formed of a conductor, asemiconductor, or a dielectric. The charge storage pattern 320 may beformed of polysilicon, and the interface layer pattern 330 may be formedof a silicon oxide layer (i.e., a dielectric layer), and the siliconoxide layer may be formed using a thermal oxide process. If theinterface layer pattern 330 is a conductor, the interface layer pattern330 may be formed using a metal silicide process. In greater detail, theinterface layer pattern 330 may be formed using a silicide process. Theinterface layer pattern 330 is not limited to metal silicide and mayinclude another conductive layer that may reduce a leakage current.

If the blocking insulation pattern 340 includes a high-k dielectriclayer, the interface layer pattern 330 can reduce a leakage currentbetween the control gate electrode 350 and the charge storage pattern320. The interface layer pattern 330 may be formed of a material thatimproves an interface junction characteristic between the blockinginsulation pattern 340 and the charge storage pattern 320. The blockinginsulation pattern 340 may include a first blocking insulation pattern340 a, a second blocking insulation pattern 340 b, and a third blockinginsulation pattern 340 c. The first blocking insulation pattern 340 aand the third blocking insulation pattern 340 c may be formed of a samematerial. Permittivities of the first blocking insulation pattern 340 aand the third blocking insulation pattern 340 c may be higher than apermittivity of the second blocking insulation pattern 340 b. Forexample, the second blocking insulation pattern 340 b may be formed of asilicon oxide layer and each of the first and third blocking insulationpatterns 340 a and 340 c may be formed of a high-k dielectric layer suchas an aluminum oxide layer. That is, high-k dielectric layers may beused as the first and third blocking insulation patterns 340 a and 340 csuch that a coupling ratio may be increased. A silicon oxide layer maybe used as the second blocking insulation pattern 340 b to reduceleakage current.

According to modified embodiments of the present invention, the firstand third blocking insulation patterns 340 a and 340 c may be formed ofrespective different materials. For example, the first blockinginsulation pattern may be formed of an aluminum oxide layer and thethird blocking insulation pattern may be formed of a hafnium oxidelayer.

Referring to FIG. 11, a device isolation layer 402 is formed in asemiconductor substrate 400 to define an active region 404. The deviceisolation layer 402 may be formed using an STI technique. The top of thedevice isolation layer 402 may be higher than that of the active region404. A tunnel insulation layer 410 may be formed on the active region404. The tunnel insulation layer 410 may be formed using a thermal oxideprocess. A charge storage pattern 420 may be formed on the tunnelinsulation layer 410. The charge storage pattern 420 may be separatedfrom adjacent charge storage patterns 420. That is, charge storagepatterns 420 formed on the active regions 404 may be separated from eachother. The top of the charge storage pattern 420 may be substantiallyeven with the top of the device isolation layer 402. The blockinginsulation pattern 440 and the control gate electrode 450 may besequentially disposed on the interface layer pattern 430 and the deviceisolation layer 402. The interface layer pattern 430 may reduce transferof charges stored in the charge storage pattern 420. The interface layerpattern 430 may be formed of a dielectric. The charge storage pattern420 may be formed of polysilicon, and the interface layer pattern 440may be formed of a dielectric layer such as silicon oxide layer.

If the blocking insulation pattern 440 includes a high-k dielectriclayer, the interface layer pattern 430 may reduce a leakage currentbetween the control gate electrode 450 and the charge storage pattern420. The interface layer pattern 430 may be formed of a material thatimproves an interface junction characteristic between the blockinginsulation pattern 440 and the charge storage pattern 420. The blockinginsulation pattern 440 may include a first blocking insulation pattern440 a, a second blocking insulation pattern 440 b, and a third blockinginsulation pattern 440 c. The first blocking insulation pattern 440 aand the third blocking insulation pattern 440 c may be formed of a samematerial. Permittivities of the first blocking insulation pattern 440 aand the third blocking insulation pattern 440 c may be higher than apermittivity of the second blocking insulation pattern 440 b. Forexample, the second blocking insulation pattern 440 b may be formed of asilicon oxide layer and each of the first and third blocking insulationpattern 440 a and 440 c may be formed of a high-k dielectric layer suchas an aluminum oxide layer.

Referring to FIG. 12, a device isolation layer 502 is formed on/in asemiconductor substrate 500 to define an active region 504. The deviceisolation layer 502 may be formed using an STI technique. The top of thedevice isolation layer 502 may be higher than that of the active region504. A tunnel insulation layer 510 may be formed on the active region504. The tunnel insulation layer 510 may be formed using a thermal oxideprocess. A charge storage pattern 520 may be formed on the tunnelinsulation layer 510. The charge storage pattern 520 may be separatedfrom adjacent charge storage patterns 520. That is, charge storagepatterns 520 formed on the active regions 504 may be separated from eachother. The top of the charge storage pattern 520 may be higher than atop of the device isolation layer 502. The charge storage pattern 520may be separated from the device isolation layer 502. The interfacelayer pattern 530 may be formed on the top surface and sidewalls of thecharge storage pattern 520. The interface layer pattern 530 may beformed of a dielectric and/or a conductor. In greater detail, if theinterface layer pattern 530 is formed of a dielectric, it may be formedby oxidizing a portion of the top surface and sidewalls of the chargestorage pattern 520. If the charge storage pattern 520 is formed ofpolysilicon, the interface layer pattern 530 may be formed of metalsilicide.

A blocking insulation pattern 540 and a control gate electrode 559 aresequentially formed on the interface layer pattern 530 and the deviceisolation layer 502. The interface layer pattern 530 may reduce transferof charges stored in the charge storage pattern 520. If the blockinginsulation pattern 540 includes a high-k dielectric layer, the interfacelayer pattern 530 can reduce a leakage current between the control gateelectrode 550 and the charge storage pattern 520. The interface layerpattern 530 may be formed of a material that improves an interfacejunction characteristic between the blocking insulation pattern 540 andthe charge storage pattern 520. The blocking insulation pattern 540 mayinclude a first blocking insulation pattern 540 a, a second blockinginsulation pattern 540 b, and a third blocking insulation pattern 540 c.The first blocking insulation pattern 540 a and the third blockinginsulation pattern 540 c may be formed of the same material.Permittivities of the first blocking insulation pattern 540 a and thethird blocking insulation pattern 540 c may be higher a permittivitythat of the second blocking insulation pattern 540 b. For example, thesecond blocking insulation pattern 540 b may be formed of a siliconoxide layer and each of the first and third blocking insulation patterns540 a and 540 c may be formed of a high-k dielectric layer such as analuminum oxide layer.

Referring to FIG. 13, a device isolation layer 602 is formed on/in asemiconductor substrate 600 to define an active region 604. The deviceisolation layer 602 may be formed using an STI technique. The top of thedevice isolation layer 602 may be higher than that of the active region604. The tunnel insulation layer 610 may be formed on the active region604. The tunnel insulation layer 610 may be formed using a thermal oxideprocess. The charge storage pattern 620 may be formed on the tunnelinsulation layer 610. The charge storage pattern 620 may cover a portionof the top of the device isolation layer 602. The charge storage pattern620 may be separated from adjacent charge storage patterns 620. That is,charge storage patterns 620 formed on the active regions 604 may beseparated from each other. A top surface of the charge storage pattern620 may be higher than that of the device isolation layer 602. Theinterface layer pattern 630 is formed on the top surface of the chargestorage pattern 620, sidewalls of the upper portion of the chargestorage pattern 620, and the device isolation layer 602 and extendsthereon. The interface layer pattern 630 may be a dielectric. In greaterdetail, the interface layer pattern 630 may be formed of a silicon oxidelayer.

A blocking insulation pattern 640 and a control gate electrode 650 aresequentially-stacked on the interface layer pattern 630 and the deviceisolation layer 602. The interface layer pattern 630 may reduce transferof charges stored in the charge storage pattern 620. If the blockinginsulation pattern 640 includes a high-k dielectric layer, the interfacelayer pattern 630 may reduce a leakage current between the control gateelectrode 650 and the charge storage pattern 620. The interface layerpattern 630 may be formed of a material that improves an interfacejunction characteristic between the blocking insulation pattern 640 andthe charge storage pattern 620. The blocking insulation pattern 640 mayinclude a first blocking insulation pattern 640 a, a second blockinginsulation pattern 640 b, and a third blocking insulation pattern 640 c.The first blocking insulation pattern 640 a and the third blockinginsulation pattern 640 c may be formed of a same material.Permittivities of the first blocking insulation pattern 640 a and thethird blocking insulation pattern 640 c may be higher than apermittivity of the second blocking insulation pattern 640 b. That is,the second blocking insulation pattern 640 b may be formed of a siliconoxide layer and the first and third blocking insulation pattern 640 aand 640 c may be formed of a high-k dielectric layer such as an aluminumoxide layer.

Referring to FIGS. 9 through 13, the control gate electrodes 650, 550,450, 350, and 250 may include at least one of sequentially-stackedbarrier metal/high work function metal, sequentially-stacked high workfunction metal/barrier metal/metal, sequentially-stacked dopedpolysilicon/barrier metal/metal, sequentially-stacked metal/dopedpolysilicon, metal, and/or doped polysilicon. A barrier metal mayinclude at least one of a metal nitride layer and a metal oxide nitridelayer. A high work function metal may be a conductive material whosework function is greater than 4 eV. For example, a high work functionmetal may include at least one of TaN, W, WN, TiN, and/or CoSi_(x).

FIGS. 14A through 14D are cross-sectional views illustrating operationsof fabricating a non-volatile memory device according to someembodiments of the present invention. Moreover, FIGS. 14A through 14Dare taken along lines I-I′ and of FIG. 3A.

Referring to FIG. 14A, the non-volatile memory device may be formedusing self aligned shallow trench isolation. In greater detail, a tunnelinsulation layer 410 and a charge storage layer 420 are stacked on asemiconductor substrate 400. The charge storage layer 420, the tunnelinsulation layer 410, and the semiconductor substrate 400 aresequentially patterned to form a trench 403. As a result, the tunnelinsulation layer 410 and the charge storage pattern 420 are formed onthe semiconductor substrate 400, and the trench 403 is aligned withsidewalls of the charge storage pattern 420.

Referring to FIG. 14B, an insulation layer is filled in the trench 403to form the device isolation layer 402. The insulation layer isplanarized using etch back and/or chemical mechanical polishing (CMP),and then removed until the charge storage pattern 420 is exposed. As aresult, the charge storage pattern 420 is provided on an active regionbetween the device isolation layers 402. The top of the charge storagepattern 420 may have substantially the same height as that of the deviceisolation layer 402.

Referring to FIG. 14C, an interface layer 430 and a blocking insulationlayer 442 are sequentially formed on an entire surface of the resultingstructure where the charge storage pattern 420 is formed. The interfacelayer 430 may be a conductor, a semiconductor, or a dielectric. Theinterface layer 430 may include at least one of a silicon oxide layer, asilicon nitride layer, and/or a silicon oxide nitride layer.

A blocking insulation layer 442 is formed on the interface layer 430.The blocking insulation layer 442 may include a high-k dielectricmaterial and may be formed of a multilayer of at least one layerselected from an aluminum oxide layer, a yttrium oxide layer, a hafniumoxide layer, a tantalum oxide layer, a zirconium oxide layer, and/or atitanium oxide layer. At this point, the blocking insulation layer 430may be formed with an equivalent oxide thickness (EOT) to provide arequired coupling ratio. Generally, a non-volatile memory devicerequires an EOT in the range of about 60 Å (Angstroms) to 150 Å(Angstroms).

The blocking insulation layer 442 includes a first blocking insulationlayer 442 a, a second blocking insulation layer 442 b, and a thirdblocking insulation layer 442 c, which are sequentially-stacked. Apermittivity of the second blocking insulation layer 442 b may be lessthan permittivities of the first blocking insulation layer 442 a and thethird blocking insulation layer 442 c. For example, the first blockinginsulation layer 442 a and the third blocking insulation layer 442 c maybe formed of a high-k dielectric material, and the second blockinginsulation layer 442 b may be formed of a silicon oxide layer.

The first blocking insulation layer 442 a or the third blockinginsulation layer 442 c may include at least one of a metal oxide layer,a metal nitride layer, and/or a metal oxide nitride layer, each of whichhas a higher permittivity than a silicon oxide layer. The secondblocking insulation layer 442 b may include at least one of a siliconoxide layer, a silicon oxide nitride layer, a silicon nitride layer, ametal oxide layer, a metal nitride layer, and/or a metal oxide nitridelayer.

A control gate conductive layer 450 is formed on the blocking insulationlayer 442. Although the control gate conductive layer 450 may be formed,for example, of polysilicon, it may also be formed of a single layer ora multilayer of metal, a conductive metal nitride layer, and/or aconductive oxide layer. The control gate conductive layer 450 mayinclude at least one of sequentially-stacked barrier metal/high workfunction metal, sequentially-stacked high work function metal/barriermetal/metal, sequentially-stacked doped polysilicon/barrier metal/metal,sequentially-stacked metal/doped polysilicon, metal, and/or dopedpolysilicon. A barrier metal may include a metal nitride layer.

Referring to FIG. 14 d, the control gate conductive layer 450, theblocking insulation layer 442, the interface layer 430, and the chargestorage pattern 420 are patterned to form a control gate electrode 450,a blocking insulation pattern 440, an interface layer pattern 430, and acharge storage pattern 420.

FIGS. 15A and 15B are respective plan and cross sectional viewsillustrating a NOR non-volatile memory device according to embodimentsof the present invention. FIG. 15B is a cross-sectional view taken alonga line of FIG. 15A.

Referring to FIGS. 15A and 15B, the NOR non-volatile memory deviceincludes a semiconductor substrate 100 having a cell region. A deviceisolation layer defines active regions 1500, 1510, and 1520. The firstactive regions 1500 are laterally arranged in a first direction. Sourcestrapping active regions 1510 are regularly arranged in the firstdirection at both sides of the first active regions 1500. Second activeregions 1520 crossing over the first active regions 1500 are laterallyarranged in a second direction. The second active regions 1520 serve assource lines.

A pair of word lines WL crosses over the first active regions 1500 andthe source strapping active regions 1510 and extend in the seconddirection. Active regions disposed on the both sides of the pair of wordlines WL become drains of a transistor, and an active region between thepair of word lines WL becomes a source of the transistor. The drain ofthe transistor is electrically connected to a bit line through a bitline contact plug 1540.

Moreover, the sources of the transistor are electrically connected tosources adjacent in the second direction through the second activeregion 1520. Therefore, the second active region 1520 serves as a sourceline. A source contact 1530 is formed at a position where the secondactive region 1520 and the source strapping active region 1510intersect.

The word line WL may include a tunnel insulation layer 110, a chargestorage pattern 120, an interface layer pattern 130, a blockinginsulation pattern 140, and a control gate electrode 150, which aresequentially-stacked on the semiconductor substrate 100. The interfacelayer pattern 130 reduces transfer of charges stored in the chargestorage pattern 120. That is, because the blocking insulation pattern140 is formed of a high-k dielectric layer, the interface layer pattern130 can reduce a leakage current between the control gate electrode 150and the charge storage pattern 120. The interface layer pattern 130 maybe formed of a material that improves an interface junctioncharacteristic between the blocking insulation layer 140 and the chargestorage pattern 120.

The charge storage pattern 120 may be formed of polysilicon. Thepolysilicon may be in-situ doped polysilicon during a depositionprocess. The charge storage pattern 120 is not limited to polysiliconand may include at least one of doped silicon, metal, and/or a metalcompound.

The interface layer pattern 130 may include at least one of adielectric, a conductor, and/or a semiconductor. If the interface layerpattern 130 is a dielectric, it may include at least one of a siliconoxide layer, a silicon nitride layer, and/or a silicon oxide nitridelayer. For example, the charge storage pattern 120 may be formed ofpolysilicon, the blocking insulation pattern 140 may includes analuminum oxide layer, and the interface layer pattern 130 may be formedof a silicon oxide layer.

The blocking insulation pattern 140 may include a high-k dielectriclayer. The high-k dielectric layer may be a material having a higherpermittivity than a silicon oxide layer. The high-k dielectric layer mayincrease the above-mentioned coupling ratio. The blocking insulationpattern 140 may include a first blocking insulation pattern, a secondblocking insulation pattern, and a third blocking insulation pattern,which are sequentially-stacked. The permittivity of the second blockinginsulation pattern may be less than permittivities of the first andthird blocking insulation patterns. For example, aluminum oxide layersmay be used for the first and third blocking insulation patterns, and asilicon oxide layer may be used for the second blocking insulationpattern. The blocking insulation pattern may further include a fourthblocking insulation pattern on the third blocking insulation pattern.The fourth blocking insulation pattern may include the same material asthe second blocking insulation pattern. The first blocking insulationpattern may include at least one of a metal oxide layer, a metal nitridelayer, and/or a metal oxide nitride layer, each of which has a higherpermittivity than a silicon oxide layer. The metal oxide layer mayinclude at least one of an aluminum oxide layer, a hafnium oxide layer,a zirconium oxide layer, and/or a hafnium aluminum oxide layer. Thesecond blocking insulation pattern may include at least one of a siliconoxide layer, a silicon oxide nitride layer, a silicon nitride layer, ametal oxide layer, a metal nitride layer, and/or a metal oxide nitridelayer.

The control gate electrode 150 may include at least one ofsequentially-stacked barrier metal/high work function metal,sequentially-stacked high work function metal/barrier metal/metal,sequentially-stacked doped polysilicon/barrier metal/metal,sequentially-stacked metal/doped polysilicon, metal, and/or dopedpolysilicon. A barrier metal may include at least one of a metal nitridelayer and/or a metal oxide nitride layer.

According to additional embodiments of the present invention, thenon-volatile memory device may be included in an electronic system.Electronic systems will be described with reference to FIG. 16.

FIG. 16 is a block diagram illustrating an electronic system with anon-volatile memory device according to some embodiments of the presentinvention.

Referring to FIG. 16, electronic system 1300 may include a controller1310, an input/output device 1320, and a memory device 1330, all ofwhich may be connected to each other through a bus 1350. The bus 1350provides a path through which data can be transferred. The controller1310 may include at least one of a microprocessor, a digital signalprocessor, a microcontroller, and/or logic devices capable performingsimilar functions thereof. The input/output device 1320 may include atleast one of a keypad and a display device. The memory device 1330 is adevice that stores data. The memory device 1330 may store data orcommands that can be executed by the controller 1310. The memory device1330 may include at least one of the non-volatile memory devicesdisclosed in the above mentioned embodiments. The electronic system 1300may further include an interface 1340 to transmit data to acommunication network and/or receive data from the communicationnetwork. The interface 1340 may be coupled to the network via a wiredand/or wireless coupling. For example, the interface 1340 may include anantenna or a wired/wireless transceiver.

The electronic system 1300 may be a mobile system, a personal computer,an industrial computer, and/or a system that performs various functions.For example, the mobile system may be a personal digital assistant(PDA), a portable computer, a web tablet, a mobile phone, a wirelessphone, a laptop computer, a memory card, a digital music system, or aninformation transmitting/receiving system. If the electronic system 1300is equipment used for wireless communication, it may include acommunication interface protocol for third generation communicationsystems such as Code Division Multiple Access (CDMA), Global System forMobile Communications (GSM), North American Digital Cellular (NADC),Extended-Time Division Multiple Access (E-TDMA), and CDMA2000.

Next, a memory card according to embodiments of the present inventionwill be described with reference to FIG. 17.

Referring to FIG. 17, the memory card 1400 includes a non-volatilememory device 1410 and a memory controller 1420. The non-volatile memorydevice 1410 can store data and read the stored data. The non-volatilememory device 1410 includes at least one of the non-volatile memorydevices disclosed in the above-mentioned embodiments. The memorycontroller 1420 controls the non-volatile memory device (e.g., a flashmemory device) 1410 to read stored data or store data therein inresponse to a read/write request of a host.

A charge trap flash memory includes a charge storage pattern that has aninsulating material interposed between a control gate electrode and asemiconductor substrate. A tunnel insulation pattern is formed betweenthe charge storage pattern and the semiconductor substrate, and ablocking insulation pattern is formed between the charge storage patternand the control gate electrode. The charge storage pattern has a trapsite for storing electric charges. Whether electric charges are chargedin the trap site or not is determined by information stored in thecharge trap flash memory.

The charge trap flash memory may reduce a parasitic capacitance and acoupling coefficient of a control gate when compared to a flash memorywith a floating gate. Additionally, the charge trap flash memory shouldmaintain a certain state stored in the charge storage pattern for apredetermined time (a retention time).

While an erase operation is performed in a charge trap flash memory witha silicon/oxide/nitride/oxide/silicon (SONOS) cell structure, a backtunneling current may occur through a blocking insulation pattern suchthat an operating speed of the erase operation may be reduced. By usinga high-k dielectric insulation layer as the blocking insulation pattern,an electric field applied to the high-k dielectric insulation layer canbe reduced. A charge trap flash memory may be provided with aTaN/Al₂0₃/Nitride/Oxide/Silicon (TANOS) cell structure. Back tunnelingcurrent flowing through a high-k dielectric insulation layer may controlan amount of FN tunneling by appropriately adjusting an energy band.

If an aluminum oxide layer Al₂O₃ is used as the high-k dielectricinsulation layer, an electric field applied to the high-k dielectricinsulation layer may be reduced and thus the back tunneling currentflowing through the high-k dielectric insulation layer can be reduced.Additionally, the back tunneling current can be further reduced by usinga conductive material (e.g., TaN, WN, TiN, CoSi_(x), polysilicon) havinga high work function of more than 4.5 eV as the control gate electrode.

On the other hand, since a high-k dielectric insulation layer as theblocking insulation pattern may include a bulk trap density, the bulktrap density can reduce a retention time of the charge storage patternand reliability of the charge trap flash memory. To increase retentiontime and/or reliability, a plurality of blocking insulation patterns canbe used. The back tunneling current can be adjusted by appropriatelycontrolling an energy band gap of the blocking insulation pattern.

The flash memory with a floating gate structure includes a chargestorage pattern that has a conductor interposed between a control gateand a semiconductor substrate. A tunnel insulation pattern is formedbetween the charge storage pattern and the semiconductor substrate, anda blocking insulation pattern is formed between the charge storagepattern and the control gate electrode. The charge storage pattern mayinclude a floating gate. The floating gate may include a conductivematerial. Whether electric charges are stored in the floating gate ornot determines information stored in the flash memory. The backtunneling current can be adjusted by appropriately controlling an energyband gap of the plurality of blocking insulation patterns.

FIGS. 18A and 18B are respective plan and cross sectional viewsillustrating a NAND non-volatile memory device according to embodimentsof the present invention. FIG. 18B is a cross-sectional view taken alonga line IV-IV′ of FIG. 18A.

Referring to FIGS. 18A and 18B, the NAND non-volatile memory deviceaccording to embodiments of the present invention includes asemiconductor substrate 2100 having a cell region. A device isolationlayer 2300 is disposed on the semiconductor substrate 2100. The deviceisolation layer 2300 defines active regions ACT. The active regions ACTare laterally arranged in a first direction. A string selection line SSLand a ground selection line GSL laterally cross over the active regionsACT and also word lines WL laterally cross over the active regions ACTbetween the string selection line SSL and the ground selection ling GSL.The string selection line SSL, the ground selection line GSL, and theword lines WL laterally extend along a second direction perpendicular tothe first direction. The string selection line SSL, the word lines WL,and the ground selection line GSL may be included in a cell stringgroup. Cell string groups may be repeatedly arranged along the firstdirection in mirror symmetry.

Impurity regions 2200 corresponding to a source and a drain may bedisposed on active regions ACT on the both sides of each of the stringselection line SSL, the word lines WL, and the ground selection linesGSL. A word line WL and the impurity regions 2200 on the both sides ofthe word line WL provide a cell transistor. The ground selection lineGSL and impurity regions 2200 on the both sides of the ground selectionline GSL provide a ground selection transistor GST. The string selectionline SSL and impurity regions 2200 on the both sides of the stringselection line SSL provide a string selection transistor SST.

The word line WL may include a tunnel insulation layer 2110, a chargestorage pattern 2120, a blocking insulation pattern 2150, and a controlgate electrode 2160. A hard mask pattern (not shown) may be disposed onthe control gate electrode 2160. The ground selection line GSL and thestring selection line SSL may have the same structure as the word lineWL. However, the widths of the string selection ling SSL and the groundselection line GSL may be different from that of the word line WL.Especially, the widths of the string selection ling SSL and the groundselection line GSL may be greater than the width of a word lines WL.Layers of the ground and string selection lines GSL and SSLcorresponding to the tunnel insulation layer 2110, the charge storagepattern 2120, and the blocking insulation pattern 2150 may be used as agate insulation layer of the ground and string selection transistors.

The tunnel insulation layer 2110, the charge storage pattern 2120, andthe blocking insulation pattern 2150 may extend adjacent anothersemiconductor substrate. The word lines WL may share the tunnelinsulation layer 2110, the charge storage pattern 2120, and the blockinginsulation pattern 2150. Additionally, the ground and string selectionlines GSL and SSL may share the tunnel insulation layer 2110, the chargestorage pattern 2120, and the blocking insulation pattern 2150. A cellspacer (not shown) may be disposed on the sidewalls of the control gateelectrode 2160. The cell spacer may be disposed on the extended blockinginsulation pattern 2150.

The blocking insulation pattern 2150 may include a first blockinginsulation pattern 2150 a, a second blocking insulation pattern 2150 b,and a third blocking insulation pattern 2150 c.

FIGS. 19A and 19B are views illustrating a NOR non-volatile memorydevice according to embodiments of the present invention. FIG. 19B is across-sectional view taken along a line VI-VI′ of FIG. 19A.

Referring to FIGS. 19A and 19B, the NOR non-volatile memory deviceaccording to embodiments of the present invention includes asemiconductor substrate 2100 having a cell region. A device isolationlayer 2300 is disposed on the semiconductor substrate 2100. The deviceisolation layer 2300 defines active regions 2500, 2510, and 2520. Thefirst active regions 2500 are arranged laterally in a first direction.The source strapping active regions 2510 are regularly arranged in afirst direction at the both sides of the first active regions 2500. Thesecond active regions 2520 that laterally cross over the first activeregions 2500 are disposed in a second direction. The second activeregions 2520 serve as a source line.

A pair of word lines WL is disposed in the second direction and crossesover the first active regions 2500 and the source strapping activeregions 2510. Active regions disposed on the both sides of the pair ofword lines become drains of a transistor, and an active region betweenthe pair of word lines becomes a source of a transistor. The drain ofthe transistor is electrically connected to a bit line through a bitline contact plug 2540.

Moreover, the sources of a transistor are electrically connected toadjacent sources in the second direction through the second activeregion 2520. Accordingly, the second active region 2520 serves as asource line. A source contact 2530 is formed at a position where thesecond active region 2520 and the source strapping active region 2510intersect.

The word line WL includes a tunnel insulation pattern 2110, a chargestorage pattern 2120, a blocking insulation pattern 2150, and a controlgate electrode 2160, which are sequentially-stacked on the semiconductorsubstrate 2100.

The tunnel insulation pattern 2110, the charge storage pattern 2120, andthe blocking insulation pattern 2150 may extend in the second direction,and the word line WL may share the tunnel insulation pattern 2110, thecharge storage pattern 2120, and the blocking insulation pattern 2150. Aspacer (not shown) may be disposed on the extended blocking insulationpattern 2150.

The blocking insulation pattern 2150 includes a first blockinginsulation layer 2150 a, a second blocking insulation layer 2150 b, anda third blocking insulation layer 2150 c.

FIG. 20 is a cross-sectional view taken along a line V-V′ of FIG. 18Aillustrating a charge trap non-volatile memory device according to someembodiments of the present invention. FIGS. 21A through 21D illustrateflat band energy band diagrams of a non-volatile memory device accordingto embodiments of the present invention.

Referring to FIGS. 20 and 21A through 21D, the non-volatile memorydevice includes a tunnel insulation pattern 2110 formed on asemiconductor substrate 2100, a charge storage pattern 2120 formed onthe tunnel insulation pattern 2110, a blocking insulation pattern 2150formed on the charge storage pattern 2120, and a control gate electrode2160 formed on the blocking insulation pattern 2150. Additionally, adevice isolation layer 2300 is formed in the semiconductor substrate2100 to define active regions ACT. The charge storage pattern 2120 maynot be separated by a unit cell. The blocking insulation pattern 2150includes a first blocking insulation pattern 2150 a, a second blockinginsulation pattern 2150 b, and a third blocking insulation pattern 2150c, which are sequentially-stacked. The first blocking insulation pattern2150 a and the third blocking insulation pattern may be formed of thesame material. An energy band gap E_(g2) of the second blockinginsulation pattern 2150 b may be greater than energy band gaps E_(g1) ofE_(g3) of the first and third blocking insulation patterns 2150 a and2150 c. The device isolation layer 2300 is disposed on the semiconductorsubstrate 2100 to define active regions ACT. This non-volatile memorydevice may have a structure in which the charge storage pattern 2120 isnot divided by unit cells.

The semiconductor substrate 2100 may include one selected from a singlecrystalline silicon layer, a silicon on insulator (SOI), a silicon layeron a silicon germanium layer, a silicon single crystalline layer on aninsulation layer, and/or a polysilicon layer on an insulation layer.

The tunnel insulation pattern 2110 may include at least one of a siliconoxide layer, a silicon oxide nitride layer, and/or a high-k dielectricmaterial. The high-k dielectric material includes at least one of analuminum oxide layer, a hafnium oxide layer, a hafnium aluminum oxidelayer, a hafnium silicon oxide layer, a zirconium oxide layer, and atantalum oxide layer. The silicon oxide layer may be a thermal oxidelayer.

The charge storage pattern 2120 may be formed of a material having trapsto store electric charges. The charge storage pattern 2120 may include adielectric layer. The charge storage pattern 2120 may include at leastone of a silicon nitride layer, a metal quantum dot, a silicon quantumdot, metal, doped silicon, and doped germanium. A metal for the chargestorage pattern 2120 may include at least one of a pure metal and/or ametal compound. The charge storage pattern 2120 may include a multilayerof at least one selected from nano crystalline silicon, nano crystallinemetal, a germanium quantum dot, a metal quantum dot, and/or a siliconquantum dot. The charge storage pattern 2120 may have a metal trap siteprovided by metal doping. Additionally, a deep trap site may be formedin an energy band of the charge storage pattern 2120 using a wetoxidation operation after the charge storage pattern 2120 is formed.

The blocking insulation pattern 2150 may include a first blockinginsulation pattern 2150 a, a second blocking insulation pattern 2150 b,and a third blocking insulation pattern 2150 c. The first blockinginsulation pattern 2150 a is disposed on the charge storage pattern2120, the second blocking insulation pattern 2150 b is disposed on thefirst blocking insulation pattern 2150 a, and the third blockinginsulation layer pattern 2150 c is disposed on the second blockinginsulation pattern 2150 b. Moreover, an energy band gap E_(g3) of thesecond blocking insulation pattern 2150 b may be greater than energyband gaps E_(g1) of E_(g3) of the first blocking insulation pattern 2150a and the third blocking insulation pattern 2150 c. The blockinginsulation pattern 2150 may have a permittivity and a charge trap. Thecharge trap density of the blocking insulation pattern 2150 may increasein proportion to the permittivity.

According to some embodiments of the present invention, a permittivityof the second blocking insulation pattern 2150 b may be less thanpermittivities of the first and third blocking insulation pattern 2150 aand 2150 c, and a charge trap density of the second blocking insulationpattern 2150 b may be less than charge trap densities of the first andthird blocking insulation pattern 2150 a and 2150 c. The charge trapdensities of the first blocking insulation pattern 2150 a, the secondblocking insulation pattern 2150 b, and the third blocking insulationpattern 2150 c may be in proportion to their permittivities.

The first and third blocking insulation patterns 2150 a and 2150 c mayeach include at least one of a metal oxide layer, a metal nitride layer,and/or a metal oxide nitride layer. A metal oxide layer may include atleast one of a hafnium silicon oxide layer, a zirconium oxide layer, ahafnium aluminum oxide layer, a hafnium oxide layer, and/or an aluminumoxide layer.

The second blocking insulation pattern 2150 b may include at least oneof a silicon oxide layer, a metal oxide layer, a metal nitride layer,and/or a metal oxide nitride layer. The metal oxide layer may include atleast one of a hafnium silicon oxide layer, a zirconium oxide layer, ahafnium aluminum oxide layer, a hafnium oxide layer, and/or an aluminumoxide layer. The blocking insulation pattern 2150 may be formed using anatomic layer deposition (ALD), chemical vapor deposition (CVD), and/orphysical vapor deposition (PVD) process.

After the first blocking insulation pattern 2150 a, the second blockinginsulation pattern 2150 b, and the third blocking insulation pattern2150 c are formed, an anneal process including at least one of O₂, N₂,and NH₃ and/or a plasma process may be performed. By providing andanneal and/or a plasma process, charge trap densities of the firstblocking insulation pattern 2150 a, the second blocking insulationpattern 2150 b, and the third blocking insulation pattern 2150 c may bereduced.

The control gate electrode 2160 may be a conductive material having awork function that is greater than 4.5 eV. For example, the control gateelectrode 2160 may include at least one of TaN, polysilicon, W, WN, TiN,and/or CoSi_(x). The control gate electrode 2160 may include anotherconductive material. For example, the control gate electrode 2160 mayinclude a structure of a multilayered barrier metal and a high workfunction metal. The high work function metal may have a work function ofgreater than 4.5 eV. The barrier metal may include at least one of ametal nitride layer, a silicon nitride layer, and/or a combinationthereof, each of which may reduce reaction between the high workfunction metal and the blocking insulation layer. The control gateelectrode 2160 may further include at least one of a high work functionmetal and doped polysilicon interposed between the barrier metal and theblocking insulation pattern 2150. The control gate electrode 2160 mayinclude at least one of sequentially-stacked doped silicon and metal, apure metal, and/or a metal containing material.

Referring to FIG. 21A, an energy band gap E_(g2) of the second blockinginsulation pattern 2150 b is greater than energy band gaps E_(g1) ofE_(g3) of the first and third blocking insulation patterns 2150 a and2150 c. A conduction band of the second blocking insulation pattern 2150b is higher than conduction bands of the first and third blockinginsulation patterns 2150 a and 2150 c. A valence band of the secondblocking insulation pattern 2150 b is higher than valence bands of thefirst and third blocking insulation patterns 2150 a and 2150 c.

Referring to FIG. 21B, an energy band gap E_(g2) of the second blockinginsulation pattern 2150 b is greater than energy band gaps E_(g1) ofE_(g3) of the first and third blocking insulation patterns 2150 a and2150 c. A conduction band of the second blocking insulation pattern 2150b is higher than conduction bands of the first and third blockinginsulation patterns 2150 a and 2150 c. A valence band of the secondblocking insulation pattern 2150 b is lower than valence bands of thefirst and third blocking insulation patterns 2150 a and 2150 c.

Referring to FIG. 21C, an energy band gap E_(g2) of the second blockinginsulation pattern 2150 b is greater than energy band gaps E_(g1) ofE_(g3) of the first and third blocking insulation patterns 2150 a and2150 c. A conduction band of the second blocking insulation pattern 2150b is lower than conduction bands of the first and third blockinginsulation patterns 2150 a and 2150 c. A valence band of the secondblocking insulation pattern 2150 b is lower than valence bands of thefirst and third blocking insulation patterns 2150 a and 2150 c.

Referring to FIG. 21D, the blocking insulation pattern 2150 may furtherinclude a fourth blocking insulation pattern 2150 d to allow twomaterials having respectively different energy band gaps to bealternately disposed. The fourth blocking insulation pattern 2150 d isformed of the same material as the second blocking insulation pattern2150 b. Accordingly, an energy band gap E_(g4) of the fourth blockinginsulation pattern is the same as that of the second blocking insulation2150 b. Additionally, according to modified embodiments of the presentinvention, the blocking insulation pattern 2150 may further include thefourth blocking insulation pattern 2150 d and a fifth blockinginsulation pattern (not shown). The fourth blocking insulation pattern2150 d is formed of the same material as the second blocking insulationpattern 2150 d, and the fifth blocking insulation layer may be formed ofthe same material as the first blocking insulation pattern 2150 a.

FIG. 22 illustrates an energy band diagram when a negative erase voltageV₀ is applied to a non-volatile memory device according to embodimentsof the present invention. FIG. 22 illustrates a state where electriccharges stored in the charge storage pattern 2120 are substantiallyand/or completely removed by the negative erase voltage V₀ applied froman external source.

In more detail, when the negative erase voltage V₀ is applied betweenthe control gate electrode 2160 of the semiconductor substrate 2100, anelectric field is generated in the tunnel insulation pattern 2110, thecharge storage pattern 2120, and the blocking insulation pattern 2150.Each electric field may be calculated using a voltage distributionmodel. A back tunneling current flowing through the blocking insulationpattern 2150 may depend on an electric field of the blocking insulationpattern 2150. The back tunneling current can be controlled by adjustinga structure, a band gap, a thickness, and/or a permittivity of theblocking insulation pattern 2150. Each electric filed may be calculatedas follows.

$V_{i} = \frac{V_{0}t_{i}}{t_{i} + {ɛ_{i}{\sum\limits_{{j = 1},{i \neq j}}^{n = 5}( \frac{ti}{ɛ_{i}} )}}}$

where the suffixes i and j may be 1 through 5. The suffixes 1 through 5represent the tunnel insulation pattern 2110, the charge storage pattern2120, the first blocking insulation pattern 2150 a, the second blockinginsulation pattern 2150 b, and the third blocking insulation pattern2150 d, respectively. The variable t represents a thickness and thevariables represents a permittivity.

For example, by increasing the thicknesses of the first blockinginsulation pattern 2150 a and the third blocking insulation pattern 2150c having relatively high permittivities, electric fields of the firstblocking insulation pattern 2150 a and the third blocking insulationpattern 2150 c can be reduced. The first blocking insulation pattern2150 a and the third blocking insulation pattern 2150 c, however, mayhave a high charge trap density due to a high permittivity. Moreover,electric charges captured in the charge trap may easily transfer to anexternal electric field. Accordingly, there may be limits to increasingthicknesses of the first and second blocking insulation patterns 2150 aand 2150 c of high permittivities.

On the other hand, by increasing a work function difference between thethird blocking insulation pattern 2150 c and the control gate electrode2160, a threshold energy for generating a back tunneling phenomenon maybe increased to reduce a back tunneling current. If an energy band gapof the second blocking insulation pattern 2150 b is less than energyband gaps of the third blocking insulation pattern 2150 c and the firstblocking insulation pattern 2150 c, electrons or electron holes may bestored in an energy well of the second blocking insulation pattern 2150b. Accordingly, an energy band of the second blocking insulation pattern2150 b may be greater than energy bands of the first and third blockinginsulation patterns 2150 a and 2150 c.

According to some embodiments of the present invention, thepermittivities and charge trap densities of each of the first blockinginsulation pattern 2150 a and the third blocking insulation pattern 2150c may be greater than a permittivity and a charge trap density of thesecond blocking insulation pattern 2150 b. Electric charges trapped inthe first blocking insulation pattern 2150 a may not easily pass throughthe second blocking insulation pattern 2150 b due to an externalelectric field so that reliability may be improved.

FIG. 23 is a cross-sectional view taken along a line V-V′ of FIG. 18A toillustrate a floating gate non-volatile memory device according to otherembodiments of the present invention. Further description of elementspreviously discussed with respect to FIGS. 20 and 21 will be omitted forconciseness.

Referring to FIG. 23, the floating gate non-volatile memory deviceincludes a tunnel insulation pattern 2110 formed on a semiconductorsubstrate 2100, a charge storage pattern 2120 formed on the tunnelinsulation pattern 2110, a blocking insulation pattern 2150 formed onthe charge storage pattern 2120, and a control gate electrode 160 formedon the blocking insulation pattern 2150. Moreover, a device isolationlayer 2300 is formed in the semiconductor substrate 2100 to define theactive regions ACT. The charge storage pattern 2120 may have a structurein which the charge storage patterns 2120 of each unit cell areseparated.

The charge storage pattern 2120 may be a floating gate, and the chargestorage pattern 2120 may include a conductive material. The floatinggate may include at least one of n-type conductive polysilicon, p-typeconductive polysilicon, metal, doped silicon, and/or doped germanium.

The control gate electrode 2160 may include at least one of polysilicondoped with a conductive material, metal, metal silicide, a metalcompound, and/or a multilayer structure thereof.

FIGS. 24A through 24C illustrate flat band energy band diagrams of anon-volatile memory device according to other embodiments of the presentinvention. However, FIGS. 24A though 24C illustrate energy band diagramswhen doped polysilicon is used as the charge storage pattern 2120 anddoped polysilicon is used as the control gate electrode 2160.

Referring to FIG. 24A, an energy band gap E_(g2) of the second blockinginsulation pattern 2150 b is greater than energy band gaps E_(g1) ofE_(g3) of the first and third blocking insulation patterns 2150 a and2150 c. A conduction band of the second blocking insulation pattern 2150b is higher than conduction bands of the first and third blockinginsulation patterns 2150 a and 2150 c. A valence band of the secondblocking insulation pattern 2150 b is higher than valence bands of thefirst and third blocking insulation patterns 2150 a and 2150 c.

Referring to FIG. 24B, an energy band gap E_(g2) of the second blockinginsulation pattern 2150 b is greater than energy band gaps E_(g1) ofE_(g3) of the first and third blocking insulation patterns 2150 a and2150 c. A conduction band of the second blocking insulation pattern 2150b is higher than conduction bands of the first and third blockinginsulation patterns 2150 a and 2150 c. A valence band of the secondblocking insulation pattern 2150 b is lower than valence bands of thefirst and third blocking insulation patterns 2150 a and 2150 c.

Referring to FIG. 24C, an energy band gap E_(g2) of the second blockinginsulation pattern 2150 b is greater than energy band gaps E_(g1) ofE_(g3) of the first and third blocking insulation patterns 2150 a and2150 c. A conduction band of the second blocking insulation pattern 2150b is lower than conduction bands of the first and third blockinginsulation patterns 2150 a and 2150 c. A valence band of the secondblocking insulation pattern 2150 b is lower than valence bands of thefirst and third blocking insulation patterns 2150 a and 2150 c.

Referring to FIG. 24A again, according to modified embodiments of thepresent invention, the blocking insulation 2150 may further include afourth blocking insulation pattern (not shown) to allow two materialshaving respectively different energy band gaps to be alternatelydisposed. The fourth blocking insulation pattern may be formed of thesame material as the second blocking insulation pattern 2150 b.Accordingly, an energy band gap of the fourth blocking insulationpattern is the same as that of the second blocking insulation.Additionally, according to modified embodiments of the presentinvention, the blocking insulation pattern 2150 may further include thefourth blocking insulation pattern and a fifth blocking insulationpatter (not shown). The fourth blocking insulation pattern is formed ofthe same material as the second blocking insulation pattern 2150 d, andthe fifth blocking insulation layer may be formed of the same materialas the first blocking insulation pattern 2150 a.

According to additional embodiments of the present invention,non-volatile memory devices disclosed in the above-mentioned embodimentsmay be included in an electronic system.

According to some embodiments of the present invention, by forming aninterface layer pattern between a charge storage pattern and a blockinginsulation pattern, a leakage current between the charge storage patternand the blocking insulation pattern may be reduced and reliability of anon-volatile memory device may be improved.

According to some embodiments of the present invention, by inserting alarge region that includes a plurality of blocking insulation patternsand has a large energy band gap, a retention time of a non-volatilememory device may be extended and also its operating speed may beimproved by reducing a back tunneling current.

The above-disclosed subject matter is to be considered illustrative, andnot restrictive, and the appended claims are intended to cover all suchmodifications, enhancements, and other embodiments, which fall withinthe true spirit and scope of the present invention. Thus, to the maximumextent allowed by law, the scope of the present invention is to bedetermined by the broadest permissible interpretation of the followingclaims and their equivalents, and shall not be restricted or limited bythe foregoing detailed description.

What is claimed is:
 1. A non-volatile memory device comprising: asemiconductor substrate; a tunnel insulation layer on the semiconductorsubstrate; a charge storage pattern on the tunnel insulation layer sothat the tunnel insulation layer is between the charge storage patternand the semiconductor substrate; and a blocking insulation pattern onthe charge storage pattern so that the charge storage pattern is betweenthe tunnel insulation layer and the blocking insulation pattern, whereinthe blocking insulation pattern comprises a first blocking insulationsub-layer, a second blocking insulation sub-layer, and a third blockinginsulation sub-layer, wherein the second blocking insulation sub-layeris between the first and third blocking insulation sub-layers, andwherein an energy band gap of the second blocking insulation sub-layeris greater than energy band gaps of the first and third blockinginsulation sub-layers.
 2. A non-volatile memory device according toclaim 1 wherein the charge storage pattern comprises a charge trappinginsulating layer or a conductive floating gate.
 3. A non-volatile memorydevice according to claim 1 wherein a permittivity of the secondblocking insulation sub-layer is less than permittivities of the firstand third blocking insulation sub-layers.
 4. A non-volatile memorydevice according to claim 1 wherein the blocking insulation patternfurther comprises a fourth blocking insulation sub-layer so that thethird blocking insulation sub-layer is between the second and fourthblocking insulation sub-layers, wherein the first and third blockinginsulation sub-layers comprise respective layers of a first material,wherein the second and fourth blocking insulation sub-layers compriserespective layers of a second material, and wherein the first and secondmaterials are different.
 5. A non-volatile memory device according toclaim 1 wherein the first and third blocking insulation sub-layers eachcomprises at least one of a metal oxide layer, a metal nitride layer,and/or a metal oxide nitride layer.
 6. A non-volatile memory deviceaccording to claim 1 wherein the second blocking insulation sub-layercomprises at least one of a silicon oxide layer, a metal oxide layer, ametal nitride layer, and/or a metal oxide nitride layer.
 7. Anon-volatile memory device according to claim 1 wherein the chargestorage pattern comprises at least one of a silicon nitride pattern, ametal quantum dot pattern, a silicon quantum dot pattern, a metalpattern, a doped silicon pattern, and/or a doped germanium pattern.
 8. Anon-volatile memory device according to claim 1 wherein the chargestorage pattern comprises at least one of an n-type conductivepolysilicon pattern, a p-type conductive polysilicon pattern, a metalpattern, and a doped germanium pattern.
 9. A non-volatile memory deviceaccording to claim 1 further comprising: a control gate electrode on theblocking insulation pattern, wherein the blocking insulation pattern isbetween the control gate electrode and the semiconductor substrate, andwherein the control gate electrode comprises layer of a barrier metaland a layer of a high work function metal.